Junction Field-Effect Transistors

Type 9118 ...

Junction Field-Effect Transistors

Plug-in junction field-effect transistors (N-channel and P-channel) in a transparent plastic housing.

Description

pluggable, in an unbreakable transparent plastic housing with three gold-plated lamella plugs

The circuit symbol is printed in white on the top of the housing.

The N-channel transistor is available with the gate connection on the left or on the right.

Technical data

  • Plug arrangement in the 19 mm grid
  • Plug diameter: 4 mm
  • Housing dimensions: 38 x 57 x 35 mm (W x D x H)

Individual types

Kind Gate connection +UDS UGS UDG IGF Ptot Type
N-channel left 25 V -25 V 25 V 10 mA 200 mW 9118.8
N-channel right 25 V -25 V 25 V 10 mA 200 mW 9118.19
P-channel left 20 V 20 V -20 V -10 mA 200 mW 9118.20

UDS = drain-source voltage, UGS = gate-source voltage, UDG = drain-gate voltage, IGF = gate current, Ptot = total power dissipation

Type numbers as named in the component overviews and experiments of the hps manuals. The detail page of each type lists the experiments in which it is used. As of 2026-09-06

Type Description Experiments Manuals
9118.8 Feldeffekt- 25 V / 10 mA · transistoren 25 V / 10 mA 5 V 0103 V 0104
9118.20 transistoren 20 V / 10 mA 1 V 0103

Taken from the tables of contents of the hps experiment manuals (titles, numbers and pages). All manuals are German; titles are shown in the original language. All manuals and experiments

V 0103 Halbleiterbauelemente Manual · 168 pages 4 experiments

Mentioned in 4 experiments Named in the manual as 9118.20, 9118.8 View table of contents

  1. 5.1 Prüfen der Schichtung und des Gleichrichterverhaltens von FETs 1 × p. 49
  2. 5.2 Durchlasskennlinie der PN-Übergänge des Gates bei FETs 1 × p. 51
  3. 5.3 Steuerwirkung des Gates beim N-Kanal-FET 1 × p. 53
  4. 5.4 Ausgangskennlinien des FETs 2 × p. 56
V 0104 Grundschaltungen der Elektronik Manual · 243 pages 1 experiment

Mentioned in 1 experiment Named in the manual as 9118.8 View table of contents

  1. 1.2 Verstärkergrundschaltungen mit Feldeffekt-Transistoren (FET) 3 × p. 6