Type 9118.11
MOS Field-Effect Transistor
Plug-in MOS field-effect transistor (-40 V / -50 mA) with gate connection on the left in a transparent plastic housing.
Description
pluggable, in an unbreakable transparent plastic housing with three gold-plated lamella plugs
The circuit symbol is printed in white on the top of the housing.
Technical data
- Drain-source voltage: UDS = -40 V
- Drain-gate voltage: UDG = -40 V
- Drain current: ID = -50 mA
- Total power dissipation: Ptot = 375 mW
- Gate connection: left
- Plug arrangement in the 19 mm grid
- Plug diameter: 4 mm
- Housing dimensions: 38 x 57 x 35 mm (W x D x H)
Taken from the tables of contents of the hps experiment manuals (titles, numbers and pages). All manuals are German; titles are shown in the original language. All manuals and experiments
V 0103 Halbleiterbauelemente Manual · 168 pages 2 experiments
Mentioned in 2 experiments View table of contents
- 6.1 Steuerwirkung des Gates beim selbstsperrenden MOS-FET 1 × p. 63
- 6.2 Ausgangskennlinien des selbstsperrenden MOS-FETs 2 × p. 67
No experiment matches the filter.
V 0104 Grundschaltungen der Elektronik Manual · 243 pages 1 experiment
Mentioned in 1 experiment View table of contents
- 4.2.3 Schaltspannungsregler 1 × p. 92
No experiment matches the filter.